Brittle-Ductile Transition


 

Objectives

To better understant the ways cracks form and propagate through a crystalline substance.
 

Results

Future Work

The silcon industry is very important to the world of computers. Every hard drive, processor, and ram chip depends directly on the quality of the silicon that they use. By understanding how dislocations form and what causes them, future microprocessors can be made smaller and faster
 

References

Brede, M., Hsia, K. J. and Argon, A. S., "Brittle crack propagation in silicon single crystals," Journal of Applied Physics 70, 758-771 (1991). [PDF]

Hsia, K. J. and Argon, A. S., "Experimental study of micromechanisms of brittle-to-ductile transition in Si single crystals," Materials Science and Engineering A176, 111-119 (1994).

Nitzsche, V. R. and Hsia, K. J., "Modeling of dislocation mobility controlled brittle-to-ductile transition," Materials Science and Engineering A176, 155-164 (1994).

Hsia, K. J., Suo, Z. and Yang, W., "Cleavage due to dislocation confinement in layered materials," Journal of Mechanics and Physics of Solids 42, 877-896 (1994).

Xin, Y.-B., Hsia, K. J. and Lange, D., "Quantitative characterization of the fracture surface of Si single crystals by confocal microscropy," Journal of the American Ceramic Society 78, 3201-208 (1995).

Xin, Y.-B. and Hsia, K. J., "A technique to generate straight through-thickness surface cracks and its application to studying dislocation nucleation in Si," Acta Materialia 44, 845-53 (1996). [PDF]

Xin, Y.-B. and Hsia, K. J., "Simulation of the brittle-to-ductile transition in silicon single crystals using dislocation mechanics," Acta Materialia 45, 1747-1759 (1997). [PDF]

Hsia, K. J. and Xin, Y.-B., "Discussion on the comment on the simulation of the brittle-ductile transition in silicon single crystals using dislocation mechanics," Scripta Materialia, 37, 1905-1907 (1997). [PDF]

Ferney, B. D. and Hsia, K. J., "The influence of multiple slip systems on the brittle-ductile transition in silicon," Materials Science and Engineering, A272, 422-430 (1999). [PDF]

 Hsia, K. J., Gao, H. and Xin Y., "On the spacing between dislocation nucleation sources at crack tips," Materials Science and Engineering A, 317 (1-2) 257-263 (2001). [PDF]

Our work follows a previous experiment conducted by Yun-Biao Xin.
 

Sponsored by the National Science Foundation

Return to the Mechanics of Materials Lab home page

Go to Department of Theoretical and Applied Mechanics home page.

mail comments to Prof. K. J. Hsia