Hsia, K. J. and Argon, A. S., "Experimental study of micromechanisms of brittle-to-ductile transition in Si single crystals," Materials Science and Engineering A176, 111-119 (1994).
Nitzsche, V. R. and Hsia, K. J., "Modeling of dislocation mobility controlled brittle-to-ductile transition," Materials Science and Engineering A176, 155-164 (1994).
Hsia, K. J., Suo, Z. and Yang, W., "Cleavage due to dislocation confinement in layered materials," Journal of Mechanics and Physics of Solids 42, 877-896 (1994).
Xin, Y.-B., Hsia, K. J. and Lange, D., "Quantitative characterization of the fracture surface of Si single crystals by confocal microscropy," Journal of the American Ceramic Society 78, 3201-208 (1995).
Xin, Y.-B. and Hsia, K. J., "A technique to generate straight through-thickness surface cracks and its application to studying dislocation nucleation in Si," Acta Materialia 44, 845-53 (1996). [PDF]
Xin, Y.-B. and Hsia, K. J., "Simulation of the brittle-to-ductile transition in silicon single crystals using dislocation mechanics," Acta Materialia 45, 1747-1759 (1997). [PDF]
Hsia, K. J. and Xin, Y.-B., "Discussion on the comment on the simulation of the brittle-ductile transition in silicon single crystals using dislocation mechanics," Scripta Materialia, 37, 1905-1907 (1997). [PDF]
Ferney, B. D. and Hsia, K. J., "The influence of multiple slip systems on the brittle-ductile transition in silicon," Materials Science and Engineering, A272, 422-430 (1999). [PDF]
Hsia, K. J., Gao, H. and Xin Y., "On the spacing between dislocation nucleation sources at crack tips," Materials Science and Engineering A, 317 (1-2) 257-263 (2001). [PDF]
Our work follows a previous
experiment conducted by Yun-Biao Xin.
Sponsored by the National Science Foundation
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